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MMBF4392LT1G

Part No MMBF4392LT1G
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description Trans JFET N-CH 30V 3-Pin SOT-23 T/R / JFET N-CH 30V 0.225W SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain-Source Breakdown Voltage 30V
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 15V
Voltage - Cutoff (VGS off) @ Id 2V @ 10nA
Max Input Capacitance 14pF @ 15V
Resistance - RDS(On) 60 Ohm
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023700-MMBF4392LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Family Name MMBF4392L
Introduction Date December 12, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian MMBF4392LT1G CAD Model

Description

ON Semiconductor MMBF4392LT1G N-Channel JFET

The MMBF4392LT1G from ON Semiconductor is a high-performance N-Channel JFET (Junction Field Effect Transistor) that is designed to deliver efficient performance for a wide range of electronic applications. Known for its low leakage and high input impedance, this JFET is an ideal choice for analog switches, choppers, commutators, and amplifiers where high-speed and reliability are critical.

With its compact SOT-23 package, the MMBF4392LT1G is perfect for space-constrained applications. The small footprint not only saves valuable board space but also enables high-density circuit designs. Despite its diminutive size, this JFET does not compromise on power and functionality, making it a versatile component for both commercial and industrial uses.

The MMBF4392LT1G boasts a continuous drain current (ID) of 10 mA and a gate-source voltage (VGSS) of 35 V, providing a robust operating threshold for a variety of circuits. It operates over a wide temperature range, from -55°C to +150°C, ensuring reliable performance under extreme conditions. This temperature resilience makes it suitable for automotive, telecommunications, and aerospace applications, where durability is paramount.

ON Semiconductor's commitment to quality is evident in the MMBF4392LT1G's design and manufacturing. The device features low on-state resistance, which minimizes power loss and enhances efficiency. Its high gain bandwidth product further contributes to its exceptional performance in high-frequency applications.

For designers looking for a JFET that offers low noise operation, the MMBF4392LT1G is an excellent choice. It is commonly used in sensitive audio and instrumentation circuits where signal integrity is crucial. Additionally, the device's fast switching speed makes it suitable for digital applications that require rapid state changes.

In summary, the MMBF4392LT1G from ON Semiconductor is a versatile, high-quality N-Channel JFET that meets the demands of modern electronic designs. Its compact size, robust performance, and reliability make it an essential component for engineers and designers looking to create efficient, high-performance electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1179 $50.1075
1,035+ $0.0968 $100.1880
1,605+ $0.0937 $150.3885
2,210+ $0.0907 $200.4470
2,855+ $0.0877 $250.3835
3,820+ $0.0786 $300.2520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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