The MMBD2835LT1G is a high-performance, dual series Schottky barrier diode designed and manufactured by ON Semiconductor. This component is engineered to offer fast switching capabilities, low forward voltage drop, and high conductivity, making it an ideal choice for a variety of applications, including high-frequency inverters, power supplies, and as a freewheeling diode in converters and motor control circuits.

Key Features

• Low Forward Voltage Drop: The diode's low forward voltage drop ensures high efficiency in applications, reducing thermal stress and improving system reliability.
• Fast Switching Speed: Its fast switching capability provides improved performance in high-speed circuits, minimizing losses during switching transitions.
• Dual Diode Configuration: The dual diode series configuration simplifies PCB layout and reduces component count, which can lead to cost savings and a more compact design.
• Power Dissipation: With a power dissipation of 225 mW, this diode can handle moderate power levels suitable for a wide range of electronic circuits.
• Surface Mount Package: The SOT-23 package allows for efficient use of PCB space and is suitable for automated assembly processes.

Electrical Characteristics

• Reverse Voltage: 30 V
• Forward Current (Continuous): 200 mA
• Forward Voltage (at IF = 10 mA): 0.385 V (typical)
• Reverse Leakage Current: 2 µA at 25 V
• Operating Temperature Range: -55°C to +150°C

Applications

The MMBD2835LT1G is versatile and can be used in a variety of electronic devices and systems. Its main applications include:

• DC-DC converters
• AC-DC power supplies
• High-frequency rectification
• Switching power supplies
• Reverse polarity protection

ON Semiconductor's commitment to quality ensures that the MMBD2835LT1G diode meets the stringent requirements of electronic systems, providing reliable and efficient performance. Its robust design and operational flexibility make it a go-to component for engineers and designers working on cutting-edge electronic solutions.