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MBRD350G

Part No MBRD350G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 50V 3A DPAK  /  Diode Schottky 50 V 3A Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Series SWITCHMODE™
Package Tube
Product Status Obsolete
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 50 V
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -65°C ~ 150°C
Base Product Number MBRD350
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names ONSONSMBRD350G,2156-MBRD350G-OS
Standard Package 75
Win Source Part Number 1076552-MBRD350G
Ultra Librarian 3D Model Ultra Librarian MBRD350G CAD Model

Description

ON Semiconductor MBRD350G Schottky Barrier Rectifier Diode

The ON Semiconductor MBRD350G is a high-performance Schottky Barrier Rectifier Diode designed for applications requiring low voltage drop and high efficiency. This rectifier is a popular choice among engineers and designers for its compact size, robust performance, and reliability in demanding environments.

Key Features

  • Voltage Rating: The MBRD350G boasts a maximum repetitive peak reverse voltage (VRRM) of 35V, making it suitable for a wide range of low voltage applications.
  • Forward Current: It can handle an average rectified forward current (IF(AV)) of up to 3A, providing ample current carrying capacity for most power rectification needs.
  • Low Forward Voltage Drop: One of the standout features of this diode is its low forward voltage drop (VF), typically only 0.39V at 3A. This characteristic ensures higher efficiency and reduced power losses in the application.
  • Fast Switching Capability: The MBRD350G is designed for fast switching, minimizing the time spent in the transition from conducting to non-conducting states, which further enhances the efficiency of the device.
  • Thermal Performance: With an operating junction temperature range of -65°C to +150°C, this diode is capable of withstanding extreme conditions without compromising its performance.
  • Package: Offered in a surface-mount DPAK package, the MBRD350G is designed for automated assembly processes and is ideal for space-constrained applications.

Applications

The MBRD350G is versatile and can be used in a variety of applications, including:

  • Low voltage, high-frequency inverters
  • Free-wheeling diodes
  • DC/DC converters
  • Power supply applications
  • Automotive applications
  • Polarity protection applications

Conclusion

ON Semiconductor's MBRD350G Schottky Barrier Rectifier Diode is an efficient, reliable solution for modern electronic applications. Its low forward voltage drop, high forward surge capability, and fast switching speeds make it an excellent choice for designers looking to optimize their power management systems. With its rugged design and wide operating temperature range, the MBRD350G is engineered to deliver consistent performance even under challenging conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4209 $50.5080
290+ $0.3454 $100.1660
450+ $0.3346 $150.5700
620+ $0.3238 $200.7560
800+ $0.3130 $250.4000
1,070+ $0.2806 $300.2420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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