The 1N5401G is a robust rectifier diode designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-quality electronic component is well-suited for a wide range of applications that require efficient and reliable rectification functions.

Key Features

• High Current Capability: With a forward current rating of 3.0 A, the 1N5401G is capable of handling high current loads, making it ideal for power supply and high-power applications.
• High Surge Current Capability: It can withstand surge currents, ensuring durability and reliability in applications with transient overloads.
• Low Forward Voltage Drop: The diode features a low forward voltage drop, which means it has high efficiency and minimal power loss during operation.
• High Reverse Voltage: With a reverse voltage rating of 100 V, it can be used in circuits that experience high levels of voltage without the risk of breakdown.

Electrical Characteristics

• Maximum Repetitive Reverse Voltage (V_RRM): 100 V
• Average Rectified Forward Current (I_o): 3.0 A
• Non-Repetitive Peak Forward Surge Current (I_FSM): 200 A
• Operating Junction Temperature Range: -65°C to +175°C

Applications

The 1N5401G is versatile and can be used in various applications, including:

• Power supplies
• Consumer electronics
• Industrial panels
• Telecommunications equipment
• Automotive systems

Quality and Compliance

ON Semiconductor is committed to providing high-quality products that meet industry standards. The 1N5401G is no exception, as it complies with RoHS and is lead-free, ensuring that it is environmentally friendly and safe for use in a wide range of consumer and industrial products.

Whether you are designing a new power system or upgrading an existing one, the 1N5401G from ON Semiconductor offers the performance and reliability you need to ensure a stable and efficient operation.