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MBD330DWT1G

Part No MBD330DWT1G
Manufacturer ON Semiconductor
Catalog RF Diodes
Description DIODE SCHOTTKY DUAL 30V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Schottky - 2 Independent
Voltage - Peak Reverse (Max) 30V
Capacitance @ Vr, F 1.5pF @ 15V, 1MHz
Power Dissipation (Max) 120mW
Temperature Range - Operating -55°C to 125°C (TJ)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 022366-MBD330DWT1G
Ultra Librarian 3D Model Ultra Librarian MBD330DWT1G CAD Model

Description

ON Semiconductor MBD330DWT1G Dual Schottky Barrier Diode

The MBD330DWT1G from ON Semiconductor is a high-performance dual Schottky barrier diode, designed to offer efficient voltage rectification with minimal power loss. This component is particularly suitable for a wide range of applications, including high-frequency inverters, power supplies, and as a freewheeling diode in various electronic circuits.

Key Features

  • Low Forward Voltage Drop: The MBD330DWT1G boasts a low forward voltage drop, which enhances the overall efficiency of the system by reducing the power dissipation during operation.
  • High Surge Capability: It is capable of handling high surge currents, making it reliable for applications that experience transient overvoltages.
  • Fast Switching Speed: With its fast switching action, this diode is ideal for high-frequency applications, ensuring minimal switching losses and improved performance.
  • Dual Diode Configuration: The dual common cathode configuration allows for the device to be used in a compact space, making it easier to design into space-constrained applications.
  • Power Dissipation: It has a power dissipation of 500 mW, which helps in maintaining thermal stability under normal operating conditions.
  • Operating Junction Temperature: The diode operates within a junction temperature range of -55°C to +150°C, providing reliable performance across a broad range of ambient temperatures.

Package and Compliance

The MBD330DWT1G is housed in a SOT-363 package, which is not only compact but also offers excellent power density for its size. It is a lead-free and RoHS-compliant component, adhering to the latest environmental standards, which makes it suitable for use in eco-friendly products.

Applications

  • DC-DC Converters
  • Power Management Devices
  • Automotive Applications
  • Portable Devices
  • Switching Power Supplies
  • Reverse Battery Protection Circuits

The MBD330DWT1G is a testament to ON Semiconductor's commitment to providing high-quality, energy-efficient components for the modern electronics industry. Its robust design and versatile features make it an excellent choice for designers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2313 $50.8860
530+ $0.1898 $100.5940
820+ $0.1839 $150.7980
1,125+ $0.1779 $200.1375
1,455+ $0.1720 $250.2600
1,950+ $0.1542 $300.6900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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