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MBD110DWT1

Part No MBD110DWT1
Manufacturer ON Semiconductor
Catalog RF Diodes
Description DIODE SCHOTTKY DUAL 7V SOT-363
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Diode Type Schottky - 2 Independent
Voltage - Peak Reverse (Max) 7V
Capacitance @ Vr, F 1pF @ 0V, 1MHz
Power Dissipation (Max) 120mW
Temperature Range - Operating -55°C to 125°C (TJ)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 219996-MBD110DWT1
Ultra Librarian 3D Model Ultra Librarian MBD110DWT1 CAD Model

Description

The MBD110DWT1 is a cutting-edge Schottky Barrier Diode, meticulously crafted by ON Semiconductor, a leader in the semiconductor industry. This diode is designed to offer superior performance in a wide array of electronic applications, particularly excelling in high-frequency environments where efficiency is paramount.

Key Features

  • Low Forward Voltage Drop: The MBD110DWT1 boasts a low forward voltage drop, which ensures minimal power loss and makes it highly efficient for use in power-sensitive circuits.
  • Fast Switching Speed: With its rapid switching capabilities, this diode is ideal for high-frequency applications, contributing to reduced switching losses and improved system performance.
  • High Current Capacity: Engineered to handle a substantial current load, this device is suited for applications requiring a robust current flow without compromising performance.
  • Low Leakage Current: The diode features a low leakage current that is critical for maintaining the integrity of the overall circuit, especially in standby or low-power modes.

Applications

The MBD110DWT1 is versatile and can be implemented in various applications, including:

  • Power Supply Rectification
  • DC-DC Converters
  • Free-Wheeling Diodes in Inverters
  • Reverse Voltage Protection
  • Switching Power Supply Systems
  • Automotive Applications

Product Specifications

Parameter Value
Package SOT-23
Configuration Dual Common Cathode
Peak Repetitive Reverse Voltage 100 V
Average Rectified Forward Current 1 A
Operating Temperature Range -55°C to +150°C

The MBD110DWT1 from ON Semiconductor is a testament to the company's commitment to providing high-quality components that meet the demanding needs of modern electronics. Whether for industrial, automotive, or consumer electronics, this Schottky Barrier Diode stands out for its reliability, efficiency, and performance.

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