The ON Semiconductor HUFA76645S3ST is a high-performance, N-Channel Power MOSFET designed for a wide range of applications that require high efficiency and power density. This device is part of ON Semiconductor's renowned portfolio of power management solutions, engineered to deliver reliable and robust performance in demanding environments.

Key Features

• Device Type: N-Channel Power MOSFET
• Package: TO-263 (D2PAK) surface-mount package, offering excellent power dissipation and compact footprint.
• Voltage Rating: The MOSFET operates at a drain-to-source voltage (V_DS) of 60V, making it suitable for a variety of mid-range voltage applications.
• Current Handling: It can handle continuous drain currents (I_D) up to 75A, ensuring high current capability for your power circuits.
• R_DS(on): Features a low on-state resistance of typically 8.0 mΩ, minimizing conduction losses and improving overall efficiency.
• Fast Switching: The device offers fast switching speeds, which is critical for reducing switching losses and improving power conversion efficiency.
• Temperature Performance: Capable of operating over a wide temperature range, making it suitable for industrial and automotive applications where reliability is paramount.

Applications

The HUFA76645S3ST from ON Semiconductor is versatile and can be used in a variety of applications including:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drives
• Battery Management Systems
• Power Inverters
• Automotive Applications

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability in their products. The HUFA76645S3ST MOSFET is no exception, with rigorous testing and quality control measures in place to ensure consistent performance. It is designed to meet the stringent requirements of the automotive industry, including AEC-Q101 qualification for automotive-grade components.

Environmental Compliance

The HUFA76645S3ST is also environmentally friendly, complying with RoHS and REACH regulations, ensuring that it is free from harmful substances and suitable for use in green applications.