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FQU4N50TU

Part No FQU4N50TU
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 100% avalanche tested, RoHS Compliant | MOSFET N-CH 500V 2.6A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 2.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.7Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 460pF at 25V
Power Dissipation (Maximum) 2.5W, 45W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 5,040
MSL Level 1 (Unlimited)
Win Source Part Number 738300-FQU4N50TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU4N50TU CAD Model

Description

Overview of ON Semiconductor's FQU4N50TU MOSFET

The FQU4N50TU from ON Semiconductor is a high-performance, N-channel QFET® MOSFET designed for a wide range of applications that require efficient power management and high reliability. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the stringent demands of modern electronic systems.

Key Features

  • Voltage and Current Ratings: With a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 4A, the FQU4N50TU is well-suited for high-voltage applications.
  • Low On-Resistance: The MOSFET features a low on-resistance (RDS(on)) of 1.35Ω, which minimizes conduction losses and enhances overall efficiency.
  • Fast Switching: The device is designed for fast switching, which is critical in applications such as switch-mode power supplies and power conversion systems.
  • High Avalanche Energy Rating: With an avalanche energy rating (EAS) that ensures robustness under stressful conditions, this MOSFET can handle high-energy pulses.

Applications

The FQU4N50TU is versatile and can be used in various applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • Lighting systems
  • Power management for consumer electronics

Package and Reliability

Encased in a TO-251 package, the FQU4N50TU is designed to offer a compact footprint while ensuring adequate heat dissipation. The package is also RoHS compliant, aligning with environmental standards and regulations. The device is characterized by its high reliability, with built-in protection features such as over-temperature and over-current safeguards to ensure stable performance over its lifespan.

Conclusion

The FQU4N50TU MOSFET by ON Semiconductor is an excellent choice for designers looking for a high-voltage, energy-efficient solution. Its low on-resistance, fast switching capabilities, and robustness under high-energy conditions make it an ideal component for a variety of power management applications. With ON Semiconductor's reputation for quality and reliability, the FQU4N50TU stands out as a reliable and efficient component for any power electronics system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9831 $58.9860
145+ $0.8067 $116.9715
225+ $0.7815 $175.8375
310+ $0.7562 $234.4220
400+ $0.7310 $292.4000
530+ $0.6553 $347.3090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,330 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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