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FQT1N80TF-WS

Part No FQT1N80TF-WS
Manufacturer ON Semiconductor
Catalog Discrete Semiconductor Products
Description MOSFET N-CH 800V 200MA SOT223-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr onsemi
Series QFET?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
Power Dissipation (Max) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-3
Base Product Number FQT1N80
Packaging Tape & Reel (TR)Cut Tape (CT)
Ultra Librarian 3D Model Ultra Librarian FQT1N80TF-WS CAD Model

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