The FQAF11N90 from ON Semiconductor is a state-of-the-art 900V N-Channel QFET® MOSFET designed for high-performance power switching applications. This MOSFET is part of ON Semiconductor's high-voltage power MOSFET portfolio and is known for its high efficiency and reliability. The FQAF11N90 is well-suited for a wide range of applications, including power supplies, lighting, industrial, and automotive systems.

Key Features

• High Voltage Capability: With a drain-source voltage (V_DSS) of 900V, this MOSFET can handle high voltage applications with ease.
• Low On-Resistance: The device boasts a low on-resistance (R_DS(on)), which translates to reduced conduction losses and improved power efficiency.
• High Current Rating: The FQAF11N90 can support a continuous drain current (I_D) of up to 11A, making it suitable for high current applications.
• Fast Switching: The fast switching speed of this MOSFET minimizes energy loss during power conversion and improves overall system performance.
• Low Gate Charge: A low total gate charge (Q_G) helps to reduce switching losses and allows for efficient operation at high frequencies.

Applications

The versatility of the FQAF11N90 makes it ideal for a variety of applications:

• Switch Mode Power Supplies (SMPS)
• Power Inverters
• Motor Drives
• Lighting Systems (e.g., LED, HID)
• Industrial Power Systems
• Automotive Electronics

Quality and Reliability

ON Semiconductor is committed to providing quality products. The FQAF11N90 is manufactured with rigorous standards, ensuring high reliability and performance under various operating conditions. It is RoHS compliant and designed with the environment in mind, adhering to ON Semiconductor's green product initiative.

For engineers and designers looking for a robust and efficient power MOSFET solution, the ON Semiconductor FQAF11N90 offers an excellent balance of high-voltage capability, efficiency, and thermal performance, making it a top choice for advanced power management applications.