The ON Semiconductor FQA9N90C is a high-performance N-Channel QFET® MOSFET designed to deliver robust performance for a wide range of applications. This power MOSFET is engineered to provide efficient power management and high-speed switching with low on-resistance and a high blocking voltage.

Key Features:

• High Voltage Capability: With a drain-source voltage (V_DS) of 900V, the FQA9N90C is suitable for high voltage applications, providing excellent power handling capabilities.
• Low On-Resistance: A low R_DS(on) of 1.5 Ohms minimizes conduction losses, enhancing overall efficiency and thermal performance.
• High Current Rating: The device can handle continuous drain currents (I_D) up to 9A, making it ideal for handling high current loads.
• Fast Switching Speed: The FQA9N90C offers fast switching with a low gate charge (Q_g), reducing switching losses and improving performance in high-frequency applications.
• Robust Thermal Performance: The device is encapsulated in a TO-3PN package, which provides excellent heat dissipation and robustness for demanding environments.

Applications:

The versatility of the FQA9N90C MOSFET makes it suitable for a variety of applications, including:

• Power supplies and DC-DC converters
• Motor drives and inverters
• Lighting systems, such as HID and LED lighting
• Switch Mode Power Supplies (SMPS)
• High voltage switching applications

Reliability:

ON Semiconductor's commitment to quality ensures that the FQA9N90C MOSFET meets stringent reliability standards. It is designed for long-term stability and performance, even under challenging conditions.

Environmental Considerations:

The FQA9N90C is RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility by reducing the use of hazardous substances in its products.