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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 13.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 430mOhm at 6.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2300pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1175153-FQA13N50
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQA13N50 CAD Model

Description

Introducing the FQA13N50 N-Channel QFET® MOSFET from ON Semiconductor

ON Semiconductor's FQA13N50 is a state-of-the-art N-Channel QFET® MOSFET designed to deliver high performance for a wide range of applications. This power MOSFET utilizes advanced QFET® technology to provide superior switching performance and high avalanche energy strength. It is housed in a robust TO-3PN package, ensuring reliable operation even under extreme conditions.

Key Features of the FQA13N50:

  • High Drain-Source Voltage (V<sub>DS): With a maximum rating of 500V, this MOSFET can handle high voltage applications with ease, making it ideal for high voltage power supplies and lighting systems.
  • Continuous Drain Current (I<sub>D): It offers a continuous drain current of up to 13A, ensuring that it can support applications with high current demands.
  • Low On-Resistance (R<sub>DS(on)): The device features a low on-resistance of 0.52Ω, which translates to reduced power losses and improved efficiency in your circuit designs.
  • High Input Capacitance (C<sub>iss): A high input capacitance of 1450pF enables efficient gate charge transfer, which is beneficial for high-speed switching applications.
  • Avalanche Energy Rated (E<sub>AS): Its robust design allows for reliable operation even in scenarios where the device is subjected to high-energy pulses.

Applications:

The FQA13N50 is versatile and can be used in a variety of applications including:

  • Power supply units
  • DC-AC converters for solar inverters
  • Motor drives
  • Power factor correction circuits
  • Switching regulators
  • LED lighting solutions

ON Semiconductor's commitment to quality ensures that the FQA13N50 provides reliable and efficient performance for your power management needs. Whether you're designing a new power system or upgrading an existing one, the FQA13N50 is an excellent choice for a wide array of high voltage and high current applications.

Environmental and Quality Certifications:

The FQA13N50 complies with various environmental standards, including RoHS and Halogen-Free certifications, making it a suitable choice for eco-friendly designs. Its construction is lead-free, ensuring that it meets global environmental regulations and promotes sustainability.

With ON Semiconductor's FQA13N50, you can expect a combination of high efficiency, robust performance, and environmental responsibility in your electronic designs.

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