The ON Semiconductor FQA11N90C is a high-performance N-Channel QFET® MOSFET designed to deliver robust and efficient power management solutions across a wide range of applications. This MOSFET is ideal for high-voltage and high-current environments, making it a suitable component for power supplies, inverters, and motor control systems.

Key Features

• Voltage and Current Ratings: The FQA11N90C operates with a drain-source voltage (V_DS) of 900V, which makes it capable of handling high voltage requirements with ease. Additionally, it has a continuous drain current (I_D) of 11A, which ensures a good current carrying capacity.
• Low On-Resistance: With a typical on-resistance (R_DS(on)) of 0.65 Ohm, this MOSFET provides efficient power conversion, which can lead to reduced power loss and improved overall system efficiency.
• High-Speed Switching: The device features a fast switching speed, which is critical for reducing switching losses in power conversion applications.
• Robust Design: The FQA11N90C is designed to withstand high energy pulses in the avalanche and commutation modes, providing reliable performance in rugged environments.
• Low Gate Charge: A reduced gate charge (Q_G) facilitates faster switching with lower drive power requirements.
• TO-3PN Package: The device comes in a TO-3PN package, which offers high power dissipation and is suitable for mounting on a heat sink for thermal management.

Applications

• Power supply units
• DC-AC inverters for solar and wind energy systems
• Uninterruptible power supplies (UPS)
• Motor drives and controllers
• High voltage switching applications

The FQA11N90C by ON Semiconductor is a testament to the company's commitment to providing advanced semiconductor solutions that meet the challenging demands of modern electronic systems. With its high voltage capability, efficient power handling, and fast switching speeds, the FQA11N90C is an excellent choice for designers looking to optimize their power management designs.