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FGHL50T65MQDT

Part No FGHL50T65MQDT
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description FS4 MID SPEED IGBT 650V 50A TO24 / IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
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Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Power - Max 268 W
Switching Energy 1.19mJ (on), 630µJ (off)
Input Type Standard
Gate Charge 99 nC
Td (on/off) @ 25°C 21ns/90ns
Test Condition 400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr) 79 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FGHL50T65MQDT
Standard Package 450
Win Source Part Number 1324201-FGHL50T65MQDT
Ultra Librarian 3D Model Ultra Librarian FGHL50T65MQDT CAD Model

Description

Introducing the FGHL50T65MQDT from ON Semiconductor

ON Semiconductor presents the FGHL50T65MQDT, a state-of-the-art Field Stop IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and reliability in a variety of power applications. This cutting-edge semiconductor device is engineered to meet the demands of modern electronic systems, offering a perfect blend of low conduction losses and minimal switching losses.

Key Features

  • High Current Capability: The FGHL50T65MQDT is capable of handling continuous currents up to 50A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 650V, this IGBT can efficiently manage high voltage operations, providing ample headroom for voltage spikes and surges commonly found in industrial environments.
  • Low On-Resistance: The low on-state voltage drop (Vce(sat)) ensures higher efficiency by reducing conduction losses, which is crucial for energy-sensitive applications.
  • Fast Switching Speed: This IGBT features fast switching characteristics, which translates to reduced switching losses and improved performance in high-frequency applications.
  • Co-Packaged Diode: It comes with a co-packaged fast recovery diode that provides additional protection against reverse voltage transients and enhances the overall performance of the device.

Applications

The FGHL50T65MQDT is ideal for a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Renewable Energy Systems
  • Power Factor Correction Circuits

Robust Design

ON Semiconductor's FGHL50T65MQDT is built to last with a robust design that ensures reliability even under harsh conditions. The device's Field Stop technology provides a thinner, highly doped drift region that results in lower forward voltage drop and reduced switching energy.

Environmental Considerations

Committed to environmental sustainability, ON Semiconductor has designed the FGHL50T65MQDT with eco-friendly considerations. It is RoHS compliant, minimizing the use of hazardous substances in its construction, thereby reducing its environmental footprint.

With its exceptional performance, efficiency, and reliability, the FGHL50T65MQDT from ON Semiconductor is an excellent choice for designers looking to enhance the power management capabilities of their next-generation electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0702 $52.9126
27+ $3.8126 $102.9402
41+ $3.6838 $151.0358
59+ $3.4262 $202.1458
76+ $3.2974 $250.6024
95+ $3.1686 $301.0170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,730 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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