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NGTB15N120FL2WG

Part No NGTB15N120FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 15A SOLAR/UPS TO247
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Power - Max 294 W
Switching Energy 1.2mJ (on), 370µJ (off)
Input Type Standard
Gate Charge 109 nC
Td (on/off) @ 25°C 64ns/132ns
Test Condition 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 110 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB15
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648452-NGTB15N120FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB15N120FL2WG CAD Model

Description

ON Semiconductor NGTB15N120FL2WG IGBT - High-Efficiency Power Solution

The NGTB15N120FL2WG from ON Semiconductor represents a cutting-edge insulated gate bipolar transistor (IGBT) designed to deliver high-efficiency and fast-switching performance in a variety of power applications. This IGBT is engineered to meet the demands of modern electronic systems, providing a perfect blend of low conduction losses and minimal switching losses.

Key Features

  • High Current Rating: With a continuous collector current of 15A at 25°C, this IGBT can handle significant power levels, making it suitable for high-power applications.
  • High Voltage Capability: The device is rated for a collector-emitter voltage of up to 1200V, providing a wide safety margin for applications subject to high voltage transients.
  • Low Saturation Voltage: The NGTB15N120FL2WG offers a low VCE(sat) of typically 2.3V at IC = 15A, reducing on-state power dissipation and improving efficiency.
  • Fast Switching Speed: Its fast-switching capability enhances performance in high-frequency power switching applications, contributing to overall system efficiency.
  • Co-Packaged Free Wheeling Diode: Comes with an integrated soft recovery diode which is optimized for minimal reverse recovery time and charge, reducing losses during switching events.

Applications

The NGTB15N120FL2WG IGBT is versatile and can be used in a range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Inverter Systems
  • Induction Heating
  • Motor Drives
  • High-Frequency Converters

Package and Reliability

This IGBT is housed in a TO-247 package, which is known for its high power dissipation and excellent thermal characteristics. The robust design ensures reliable performance even under harsh conditions, making it a dependable choice for critical power applications. ON Semiconductor's commitment to quality ensures that the NGTB15N120FL2WG IGBT provides long-term reliability and performance consistency.

With its superior efficiency, power handling, and reliability, the NGTB15N120FL2WG from ON Semiconductor is an ideal choice for designers looking to optimize their power systems for both performance and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3685 $52.1070
52+ $1.9434 $101.0568
80+ $1.8827 $150.6160
110+ $1.8220 $200.4200
142+ $1.7612 $250.0904
190+ $1.5790 $300.0100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,850 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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