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FGHL40T65MQD

Part No FGHL40T65MQD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 40A TO247 / IGBT Trench Field Stop 650 V 80 A 238 W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Power - Max 238 W
Switching Energy 860µJ (on), 520µJ (off)
Input Type Standard
Gate Charge 86 nC
Td (on/off) @ 25°C 22ns/109ns
Test Condition 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 33 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGHL40
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FGHL40T65MQD
Standard Package 450
Win Source Part Number 1324184-FGHL40T65MQD
Ultra Librarian 3D Model Ultra Librarian FGHL40T65MQD CAD Model

Description

The FGHL40T65MQD is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leader in power and signal management. This IGBT is designed to offer high efficiency and fast switching in a variety of applications, including motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial power systems.

Featuring a robust and durable design, this IGBT is capable of handling continuous collector currents up to 40A at a temperature of 25°C. With an impressive collector-emitter voltage of 650V, the FGHL40T65MQD ensures safe operation even under high voltage conditions. This makes it an ideal choice for high voltage power applications that require reliable performance and longevity.

The device is constructed with ON Semiconductor's proprietary Field Stop Trench IGBT technology, which provides an optimal balance between conduction and switching losses. This technology enhances the device's efficiency and thermal performance, leading to lower energy consumption and reduced heat generation. As a result, systems utilizing the FGHL40T65MQD can achieve higher power densities while maintaining a compact form factor.

ON Semiconductor has also integrated a soft and fast recovery anti-parallel diode into the FGHL40T65MQD. This feature minimizes recovery losses and reduces electromagnetic interference (EMI), which is crucial for maintaining the integrity of electronic systems and complying with regulatory standards.

The FGHL40T65MQD comes in a TO-247 package, which is widely recognized for its excellent thermal characteristics. The package ensures that the IGBT can handle high current and power levels without compromising on performance. Additionally, the TO-247 package is compatible with standard mounting processes, which simplifies the integration of the FGHL40T65MQD into existing designs.

In summary, the ON Semiconductor FGHL40T65MQD IGBT is a highly efficient, robust, and reliable component that meets the demanding requirements of modern power electronic applications. Its advanced features and superior performance make it an excellent choice for designers looking to enhance the efficiency and reliability of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4499 $51.7485
31+ $3.2315 $100.1765
49+ $3.1223 $152.9927
69+ $2.9040 $200.3760
90+ $2.7948 $251.5320
112+ $2.6857 $300.7984
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Availability: 600 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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