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FGH50N6S2

Part No FGH50N6S2
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 600V, SMPS II Series N-Channel IGBT | IGBT 600V 75A 463W TO247
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 75A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 30A
Maximum Power 463W
Switching Energy 260μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 70nC
Td (on/off) at 25°C 13ns/55ns
Test Condition 390V, 30A, 3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Manufacturer Pack Quantity 150
MSL Level 1 (Unlimited)
Win Source Part Number 1174191-FGH50N6S2
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian FGH50N6S2 CAD Model

Description

The FGH50N6S2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, designed to cater to a broad range of power applications. This IGBT is well-suited for applications requiring fast switching and high efficiency, making it a popular choice for inverters, converters, and motor drives.

Key Features

  • Current Handling: The device can handle continuous collector currents up to 50A, making it capable of powering heavy loads without performance degradation.
  • Voltage Rating: With a collector-emitter voltage (Vce) rating of 600V, the FGH50N6S2 can be used in high-voltage circuits, providing excellent power handling capabilities.
  • Low Saturation Voltage: The low on-state collector-emitter saturation voltage (Vce(sat)) minimizes conduction losses and improves overall efficiency in power applications.
  • High-Speed Switching: The IGBT is designed for fast switching applications, which reduces switching losses and improves the performance of power conversion systems.
  • Co-Packaged Diode: This IGBT comes with a co-packaged free-wheeling diode, which provides protection against reverse voltage and reduces the need for external components.

Applications

The FGH50N6S2 IGBT from ON Semiconductor is ideal for a variety of applications that require efficient power management and high-speed operation. Common applications include:

  • Uninterruptible Power Supplies (UPS)
  • DC-AC Power Inverters
  • AC-DC Power Converters
  • High-Frequency Induction Heating
  • Motor Drives and Controls
  • Switch Mode Power Supplies (SMPS)

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability, and the FGH50N6S2 is no exception. The device undergoes rigorous testing to ensure it meets the industry standards for performance and durability. It is engineered to provide reliable operation even under harsh conditions, making it a trusted choice for critical power applications.

With its combination of high current capability, low saturation voltage, and fast switching speeds, the FGH50N6S2 IGBT from ON Semiconductor is an excellent choice for designers looking to optimize their power circuitry for efficiency and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.4812 $66.3684
15+ $7.7795 $116.6925
23+ $7.5364 $173.3372
32+ $7.2933 $233.3856
41+ $7.0501 $289.0541
55+ $6.3209 $347.6495
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Availability: 1,310 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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