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Same model may have multiple batches, images only for reference.
IXGH40N60B2 Real Image
Same model may have multiple batches, images only for reference.

IXGH40N60B2

Part No IXGH40N60B2
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 300W TO247 / IGBT PT 600 V 75 A 300 W Through Hole TO-247AD
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Power - Max 300 W
Switching Energy 400µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 18ns/130ns
Test Condition 400V, 30A, 3.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH40
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324197-IXGH40N60B2
Ultra Librarian 3D Model Ultra Librarian IXGH40N60B2 CAD Model

Description

The IXGH40N60B2 is a PT type IGBT transistor designed for use in discrete semiconductor products from IXYS.

  • Maximum Collector Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 75A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Gate Charge: 100 nC
  • Mounting Type: Through Hole
  • Package: TO-247AD package

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