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FGD2736G3-F085

Part No FGD2736G3-F085
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description ECOSPARK3 IGN-IGBT TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr onsemi
Series EcoSPARK®
Package Tape & Reel
Product Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 360 V
Current - Collector (Ic) (Max) 21 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 4.5V, 10A
Power - Max 150 W
Switching Energy -
Input Type Logic
Gate Charge 18 nC
Td (on/off) @ 25°C 4µs/15µs
Test Condition 14V, 10A, 1000Ohm, 5V
Reverse Recovery Time (trr) 7 µs
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Base Product Number FGD2736
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378419-FGD2736G3-F085
Ultra Librarian 3D Model Ultra Librarian FGD2736G3-F085 CAD Model

Description

Product Overview: FGD2736G3-F085 by ON Semiconductor

The FGD2736G3-F085 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is tailored for a range of applications that require fast switching, high efficiency, and reliability. It is particularly well-suited for use in motor drives, uninterruptible power supplies (UPS), inverter systems, and other power conversion applications that demand robust components capable of handling substantial power levels.

Key Features

  • High Current Capability: The FGD2736G3-F085 is designed to handle high current loads, making it an ideal choice for power-intensive applications.
  • Low On-State Voltage: This IGBT offers a low VCE(on), which reduces on-state power loss and enhances overall efficiency in power conversion circuits.
  • Fast Switching Speed: With its fast switching capabilities, the FGD2736G3-F085 minimizes switching losses and improves performance in high-frequency applications.
  • High Input Impedance: The device features a high input impedance, which simplifies gate drive requirements and reduces the need for complex driving circuits.
  • Rugged Design: ON Semiconductor's commitment to quality ensures that the FGD2736G3-F085 is built to withstand harsh operating conditions and provide reliable performance over its lifespan.

Technical Specifications

  • Collector-Emitter Voltage (VCE): 360 V
  • Collector Current (IC): Up to 60 A
  • Power Dissipation (PD): 179 W
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-3P

The FGD2736G3-F085 is encapsulated in a TO-3P package, which offers excellent thermal properties and is easy to mount in a wide variety of PCB layouts. Its robust construction ensures that it can cope with the thermal and mechanical stresses that are typical in high-power electronic devices.

ON Semiconductor's FGD2736G3-F085 is not only a testament to their dedication to high-quality electronic components but also an essential part of the power management and conversion landscape. With its superior performance and reliability, this IGBT is an excellent choice for designers looking to improve the efficiency and longevity of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9196 $59.7740
155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
330+ $0.7075 $233.4750
425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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