The ON Semiconductor FDS6679A is a high-performance, PowerTrench® MOSFET designed to deliver efficient power management and conversion within electronic systems. This advanced technology has been optimized for power switching applications that require low gate charge (Qg), low on-state resistance (Rds(on)), and high current handling capabilities.
Key Features
- Low On-State Resistance: The FDS6679A features an extremely low Rds(on) of just 13.5 mΩ at Vgs=10V, which helps in reducing conduction losses and improving overall efficiency in applications.
- High Current Capability: This MOSFET can handle continuous drain currents of up to 13 A, making it suitable for high-power applications.
- Fast Switching: With a low gate charge and fast switching speed, the FDS6679A is ideal for high-frequency power switching applications.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process allows for a highly efficient, reliable, and compact device design.
- Thermal Management: The device is encapsulated in a surface-mount SO-8 package which aids in thermal management and space-saving on PCB layouts.
Applications
The FDS6679A is versatile and can be used in a wide range of applications, including:
- DC/DC converters
- Power management for computers and laptops
- Motor drives and controls
- Battery management systems
- Load switches
- Point of Load (POL) modules
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vds) |
30V |
| Gate-Source Voltage (Vgs) |
±20V |
| Continuous Drain Current (Id) @ 25°C |
13A |
| Power Dissipation (Pd) |
2.5W |
| Rds(on) |
13.5 mΩ @ Vgs=10V |
With its robust construction, the FDS6679A MOSFET from ON Semiconductor is a reliable and efficient solution for designers looking to improve power density and performance in their applications.