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FDMS86181 Real Image FDMS86181 real image22517
Same model may have multiple batches, images only for reference.
FDMS86181 Real Image FDMS86181 real image22517
FDMS86181 Real Image FDMS86181 real image22517
Same model may have multiple batches, images only for reference.

FDMS86181

Part No FDMS86181
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 100V 44A POWER56
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 44A , 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 4.2mOhm at 44A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 59nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4125pF at 50V
Power Dissipation (Maximum) 2.5W , 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805473-FDMS86181
Ultra Librarian 3D Model Ultra Librarian FDMS86181 CAD Model

Description

The ON Semiconductor 805473-FDMS86181 is an N-channel MOSFET integrated circuit. It is manufactured by ON Semiconductor.

  • Drain to Source Voltage: 100V
  • Current Continuous Drain (Id) @ 25°C: 44A, 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 4125pF @ 50V
  • Operating Temperature: -55°C ~ 150°C
  • Package/Case: 8-PowerTDFN (5x6)

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