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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 52A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 70mOhm at 26A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 166nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4925pF at 380V
Power Dissipation (Maximum) 481W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 Long Leads
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1173578-FCH070N60E
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCH070N60E CAD Model

Description

Product Overview: FCH070N60E by ON Semiconductor

The FCH070N60E is a cutting-edge 600V, N-Channel SuperFET® III MOSFET designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This high-performance MOSFET is engineered to deliver exceptional efficiency, reliability, and thermal performance, making it an ideal choice for a wide range of power applications.

Key Features

  • Advanced SuperFET® III Technology: The FCH070N60E utilizes ON Semiconductor's proprietary SuperFET III technology, which provides lower on-resistance and reduced gate charge, leading to improved switching performance and higher efficiency.
  • High Current Capability: With a continuous drain current (ID) of 70A, this MOSFET can handle high-power applications with ease.
  • High Voltage Rating: The device is rated for a drain-to-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
  • Low On-Resistance: Featuring an extremely low typical on-resistance (RDS(on)) of 0.045 ohms, the FCH070N60E ensures minimal power loss during operation.
  • Fast Switching Speed: Fast switching capabilities are a hallmark of this MOSFET, reducing losses during power conversion processes.
  • Robust Body Diode: The device includes a robust body diode with a low reverse recovery charge (Qrr), which is critical for high-efficiency power switching.

Applications

The FCH070N60E is highly versatile and can be used in various applications such as:

  • Power Supply Units (PSUs)
  • Uninterruptible Power Supplies (UPS)
  • DC-AC Inverters for Solar Energy Systems
  • Electric Vehicle (EV) Chargers
  • High-Efficiency DC-DC Converters
  • Welding Equipment
  • Induction Heating Systems

Reliability and Safety

ON Semiconductor's FCH070N60E is designed with reliability in mind. It features a 100% avalanche tested design, ensuring robustness and longevity in harsh environments. Additionally, the MOSFET is RoHS compliant, adhering to environmental standards and promoting sustainability in electronic components.

Conclusion

The FCH070N60E from ON Semiconductor exemplifies state-of-the-art MOSFET technology with its high voltage capacity, low on-resistance, and fast switching speeds. Suitable for a broad array of power applications, this device is engineered to boost efficiency, reduce power losses, and ensure reliable operation in even the most demanding situations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8812 $65.2872
11+ $10.1926 $112.1186
18+ $9.8483 $177.2694
25+ $9.1596 $228.9900
32+ $8.8153 $282.0896
40+ $8.4709 $338.8360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 300 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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