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FCD850N80Z

Part No FCD850N80Z
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 3A, 10V
Vgs(th) (Maximum) at Id 4.5V at 600μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1315pF at 100V
Power Dissipation (Maximum) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 801881-FCD850N80Z
Ultra Librarian 3D Model Ultra Librarian FCD850N80Z CAD Model

Description

ON Semiconductor FCD850N80Z MOSFET Overview

The ON Semiconductor FCD850N80Z is a high-performance, N-channel MOSFET designed for a variety of applications requiring efficient power management and high-speed switching capabilities. This device is part of ON Semiconductor's portfolio of power MOSFETs that offer industry-leading performance and reliability.

Key Features

  • High Voltage Capability: The FCD850N80Z is designed to handle a maximum drain-source voltage (V<sub>DS) of 800V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 0.85Ω, this MOSFET ensures minimal power loss and improved efficiency in your circuit designs.
  • High Continuous Drain Current: It can support a continuous drain current (I<sub>D) of up to 4.5A, providing ample current handling for a wide range of uses.
  • Fast Switching Speed: The device features a fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency applications.
  • Low Gate Charge: A low total gate charge (Q<sub>G) helps to reduce driving power requirements and simplifies the design of the gate drive circuitry.

Applications

The FCD850N80Z is versatile and can be used in various applications, including:

  • Power supplies and adapters
  • LED lighting systems
  • AC-DC converters
  • Motor drives
  • Power inverters
  • Switch-mode power supplies (SMPS)

Robust and Reliable Design

This MOSFET is built to be robust and reliable. It features a TO-220 package, which is known for good thermal performance and ease of mounting. Additionally, it is designed to withstand high energy pulses in the avalanche and commutation modes, which enhances its durability and longevity in challenging environments.

Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The FCD850N80Z is compliant with RoHS regulations, ensuring that it is free from harmful substances and suitable for use in environmentally sensitive applications.

Whether you're designing power management systems or looking to improve the efficiency of existing designs, the ON Semiconductor FCD850N80Z MOSFET is a reliable and efficient choice that delivers exceptional performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9162 $57.4860
65+ $1.5723 $102.1995
100+ $1.5231 $152.3100
140+ $1.4740 $206.3600
180+ $1.4249 $256.4820
235+ $1.2775 $300.2125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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