ON Semiconductor BD180G Bipolar Transistor

The BD180G is a high-power bipolar transistor from ON Semiconductor, renowned for its reliability and performance in a variety of applications. This PNP transistor is specifically designed to cater to the needs of electronic enthusiasts and professionals alike, offering a perfect solution for amplification and switching applications.

This transistor features a collector-emitter voltage (VCEO) of -80V and a collector current (IC) of up to -3A, making it suitable for moderate power applications. The device also boasts a collector power dissipation (PC) of 30W, providing a good balance between power handling and efficiency. The BD180G is housed in a TO-225 package, which ensures easy mounting on a printed circuit board (PCB) while providing adequate heat dissipation for stable operation.

ON Semiconductor has designed the BD180G with a focus on performance and durability. The device exhibits excellent gain characteristics, with a DC current gain (hFE) of 40 to 160 at IC = -150mA, ensuring that it can drive significant loads with a minimal base drive current. This makes the BD180G an ideal choice for audio amplifiers, power regulators, and DC-DC converters.

The BD180G also features a fast switching speed, which is essential for applications requiring quick transitions between on and off states, such as motor control circuits. Its robust construction ensures that it can withstand harsh operating conditions, making it suitable for industrial and automotive applications where reliability is paramount.

ON Semiconductor also takes safety seriously, and the BD180G includes built-in features to protect against overcurrent and thermal overload. This proactive approach to safety not only helps to prevent damage to the transistor but also safeguards the entire circuit in which it is used.

In summary, the BD180G from ON Semiconductor is a versatile and reliable PNP bipolar transistor that offers a combination of power handling, efficiency, and speed. Its robust design and built-in protection features make it an excellent choice for a wide range of electronic applications.

Specifications:

• PNP Bipolar Transistor
• Collector-Emitter Voltage (VCEO): -80V
• Collector Current (IC): -3A
• Collector Power Dissipation (PC): 30W
• DC Current Gain (hFE): 40 to 160 at IC = -150mA
• Package: TO-225