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AFGY120T65SPD

Part No AFGY120T65SPD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT - 650 V 120 A FS3 FOR EV TR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 160 A
Current - Collector Pulsed (Icm) 360 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
Power - Max 714 W
Switching Energy 6.6mJ (on), 3.8mJ (off)
Input Type Standard
Gate Charge 125 nC
Td (on/off) @ 25°C 40ns/80ns
Test Condition 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr) 107 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number AFGY120
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376593-AFGY120T65SPD
Ultra Librarian 3D Model Ultra Librarian AFGY120T65SPD CAD Model

Description

Introducing the AFGY120T65SPD from ON Semiconductor

The AFGY120T65SPD is a state-of-the-art silicon carbide (SiC) MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance power semiconductor is engineered to meet the demanding needs of modern power supply systems, offering a combination of high power efficiency, fast switching speeds, and exceptional thermal performance.

Key Features

  • Advanced Material: The device is built on advanced SiC technology, which provides superior switching performance and higher efficiency compared to traditional silicon devices.
  • High Voltage Rating: With a drain-to-source voltage (VDS) of 650V, the AFGY120T65SPD can handle high voltage applications with ease.
  • Low On-Resistance: The low on-resistance (RDS(on)) of this MOSFET minimizes conduction losses, leading to better overall system efficiency.
  • High Current Capacity: It supports a continuous drain current (ID) of 120A, making it suitable for high-power applications.
  • Fast Switching Speed: The device's fast switching capabilities reduce switching losses, thereby enhancing performance in high-frequency power conversion systems.
  • Robust Design: The AFGY120T65SPD is designed to withstand harsh conditions, ensuring reliability and longevity in industrial environments.

Applications

The AFGY120T65SPD is ideal for a wide range of power applications, including:

  • Electric vehicle (EV) chargers
  • Uninterruptible power supplies (UPS)
  • Switch-mode power supplies (SMPS)
  • Solar inverters
  • Industrial motor drives

Enhanced Performance

ON Semiconductor's AFGY120T65SPD delivers enhanced performance through reduced switching losses, which is critical for increasing the efficiency of power conversion systems. Its rugged design ensures that it can operate reliably even under high-stress conditions, making it a preferred choice for engineers looking to optimize their power designs.

Environmental Impact

Committed to environmental sustainability, ON Semiconductor ensures that the AFGY120T65SPD contributes to energy-saving solutions, helping to reduce the carbon footprint of electronic systems worldwide.

With its combination of high efficiency, reliability, and performance, the AFGY120T65SPD from ON Semiconductor is a top-tier component for designers who seek to push the boundaries of power electronics technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.2398 $71.1990
9+ $13.3211 $119.8899
14+ $12.8618 $180.0652
20+ $11.9431 $238.8620
26+ $11.4837 $298.5762
32+ $11.0244 $352.7808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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