The ON Semiconductor 3SK181 is a high-performance N-Channel Junction Field Effect Transistor (JFET) designed for demanding RF amplifier and oscillator applications. This JFET is well-suited for VHF/UHF amplifiers and features a low noise figure, making it an excellent choice for sensitive radio frequency designs.

Key Features

• High Gain-Bandwidth Product: The 3SK181 offers a high gain-bandwidth product, enabling it to operate effectively at high frequencies.
• Low Noise Figure: With its low noise characteristics, it ensures a clear signal in RF applications, minimizing interference and distortion.
• High Power Gain: This JFET is capable of delivering high power gain, making it suitable for amplifiers that require strong signal amplification.
• High Direct Current Input Impedance: The high input impedance allows for minimal loading of the preceding stage, which is critical in RF and IF amplifiers.
• High Drain-Source Voltage (V<sub>DS): It supports a high drain-source voltage, providing flexibility in various circuit designs.

Applications

The 3SK181 JFET is ideal for a range of applications, including:

• VHF/UHF Amplifiers
• RF Oscillators
• Mixers
• Low-Noise RF Amplifiers

Product Specifications

Parameter Value Channel Type N-Channel Drain-Source Voltage (V<sub>DS) 20 V Gate-Source Voltage (V<sub>GS) -20 V Drain Current (I<sub>D) 10 mA Gate Operating Current (I<sub>GG) 1 µA

The ON Semiconductor 3SK181 N-Channel JFET is a robust and reliable component for RF amplifiers and oscillators, offering excellent electrical characteristics for high-frequency applications. Its low noise figure and high gain make it an outstanding choice for professional-grade audio and communication systems.