The ON Semiconductor 3SK181 is a high-performance N-Channel Junction Field Effect Transistor (JFET) designed for demanding RF amplifier and oscillator applications. This JFET is well-suited for VHF/UHF amplifiers and features a low noise figure, making it an excellent choice for sensitive radio frequency designs.
Key Features
- High Gain-Bandwidth Product: The 3SK181 offers a high gain-bandwidth product, enabling it to operate effectively at high frequencies.
- Low Noise Figure: With its low noise characteristics, it ensures a clear signal in RF applications, minimizing interference and distortion.
- High Power Gain: This JFET is capable of delivering high power gain, making it suitable for amplifiers that require strong signal amplification.
- High Direct Current Input Impedance: The high input impedance allows for minimal loading of the preceding stage, which is critical in RF and IF amplifiers.
- High Drain-Source Voltage (V<sub>DS): It supports a high drain-source voltage, providing flexibility in various circuit designs.
Applications
The 3SK181 JFET is ideal for a range of applications, including:
- VHF/UHF Amplifiers
- RF Oscillators
- Mixers
- Low-Noise RF Amplifiers
Product Specifications
Parameter
Value
Channel Type
N-Channel
Drain-Source Voltage (V<sub>DS)
20 V
Gate-Source Voltage (V<sub>GS)
-20 V
Drain Current (I<sub>D)
10 mA
Gate Operating Current (I<sub>GG)
1 µA
The ON Semiconductor 3SK181 N-Channel JFET is a robust and reliable component for RF amplifiers and oscillators, offering excellent electrical characteristics for high-frequency applications. Its low noise figure and high gain make it an outstanding choice for professional-grade audio and communication systems.
