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2SJ635-TL-E

Part No 2SJ635-TL-E
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 158820-2SJ635-TL-E
Popularity Low
Supply and Demand Status Limited
Family Name 2SJ635
Introduction Date June 15, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SJ635-TL-E CAD Model

Description

Product Overview: 2SJ635-TL-E from ON Semiconductor

The 2SJ635-TL-E is a high-performance P-Channel MOSFET developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to cater to a wide range of applications, offering a combination of low on-resistance and high switching speeds. The 2SJ635-TL-E is particularly well-suited for power management tasks in both consumer and industrial electronics.

Key Features

  • Low On-Resistance: The device boasts a very low on-resistance, which translates into reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, the 2SJ635-TL-E minimizes switching losses and is ideal for high-frequency applications.
  • Low Gate Charge: The MOSFET is designed with a low gate charge, which helps to reduce the power required to drive the gate, thus saving energy and enhancing system reliability.
  • Small Package Size: Enclosed in a compact TSMT3 package, the 2SJ635-TL-E saves valuable board space and is suitable for space-constrained applications.

Applications

The versatile nature of the 2SJ635-TL-E makes it a perfect fit for a variety of applications, including:

  • DC/DC converters
  • Power supplies
  • Motor drives
  • Battery management systems
  • Load switches
  • Switching regulators

Technical Specifications

The 2SJ635-TL-E offers a comprehensive set of technical characteristics that ensure its performance and reliability:

  • Drain-Source Voltage (VDS): -30V
  • Continuous Drain Current (ID): -6A
  • Power Dissipation (PD): 1W
  • Operating Temperature Range: -55°C to +150°C

ON Semiconductor's commitment to quality is evident in the 2SJ635-TL-E, which is built to meet the rigorous demands of modern electronic systems. By integrating this MOSFET into your design, you can expect a boost in performance, efficiency, and reliability, making it an excellent choice for your power management needs.

For detailed specifications, application notes, and additional resources, please refer to ON Semiconductor's official documentation available on their website or through authorized distributors.

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