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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 158620-2SJ419
Popularity Low
Supply and Demand Status Limited
Family Name 2SJ419
Introduction Date August 26, 2004
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SJ419 CAD Model

Description

Product Overview: 2SJ419 P-Channel MOSFET

The 2SJ419 is a high-performance P-Channel MOSFET from ON Semiconductor, renowned for its efficiency and reliability. This MOSFET is designed to meet the requirements of a broad range of applications, offering designers a versatile component for their power management solutions.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (V<sub>DS): -60V
  • Continuous Drain Current (I<sub>D): -12A
  • Power Dissipation (P<sub>D): 35W
  • R<sub>DS(on): Low on-state resistance for improved efficiency
  • Gate Charge (Q<sub>g): Optimized for fast switching performance

Applications

The 2SJ419 MOSFET is suitable for a variety of applications, including but not limited to:

  • Power supply circuits
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power management in portable and consumer electronics

Quality and Reliability

ON Semiconductor's commitment to quality ensures that the 2SJ419 MOSFET meets stringent standards, providing a reliable solution for your electronic designs. Its robust construction is designed to withstand the demands of various operating conditions, ensuring a long operational life.

Environmental Compliance

The 2SJ419 is compliant with RoHS directives, making it an environmentally responsible choice for manufacturers looking to minimize the ecological impact of their products.

Technical Support and Resources

ON Semiconductor provides extensive technical support and resources for the 2SJ419, including datasheets, application notes, and design tools. Customers can access these resources to accelerate the design process and optimize the use of this MOSFET in their applications.

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