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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 500mV at 100mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 1A, 1V
Maximum Power 1W
Frequency - Transition 500MHz
Mounting Style Through Hole
Manufacturer Package TO-237AA
Supplier Device Package TO-237
Family Part Number 2N6727
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1124188-2N6727
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N6727 CAD Model

Description

Introducing the 2N6727 Power Transistor by ON Semiconductor

The 2N6727 is a robust power transistor designed and manufactured by ON Semiconductor, a company renowned for its commitment to innovation and quality in the semiconductor industry. This versatile transistor is an essential component for a wide range of electronic applications, offering reliability and performance that engineers and designers can depend on.

Key Features:

  • Versatile Power Handling: The 2N6727 is capable of managing moderate power levels, making it suitable for various amplification and switching applications.
  • High Voltage Capability: This transistor can handle high voltage operations, which is critical for applications that require a wide range of input voltages.
  • Robust Thermal Performance: With its excellent thermal properties, the 2N6727 ensures reliable operation even under high-temperature conditions.
  • Compact Design: The device comes in a small package, allowing for efficient use of space on printed circuit boards (PCBs).

Applications:

The 2N6727 is a versatile component suitable for a diverse set of applications, including:

  • Power regulation modules
  • Motor control circuits
  • Switching power supplies
  • Audio amplifiers
  • Automotive and industrial systems

Specifications:

The 2N6727 from ON Semiconductor is characterized by its impressive specifications:

  • Collector-Emitter Voltage (Vceo): 60V
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 800mW
  • DC Current Gain (hFE): 50 to 200
  • Operating Junction Temperature Range: -55°C to 150°C

Quality and Reliability:

ON Semiconductor is committed to delivering high-quality products. The 2N6727 power transistor is no exception, meeting strict industry standards for quality and reliability. Customers can trust this component to perform consistently over its intended lifespan, even in demanding conditions.

For detailed technical specifications, application notes, and support resources, visit the ON Semiconductor website or contact their customer support team. Trust the 2N6727 for your next project and experience the difference in quality and performance that ON Semiconductor provides.

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