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PMZ950UPE

Part No PMZ950UPE
Manufacturer NXP / Nexperia
Catalog Misc Products
Description 20 V, P-channel Trench MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer NXP
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 834077-PMZ950UPE
Ultra Librarian 3D Model Ultra Librarian PMZ950UPE CAD Model

Description

The NXP PMZ950UPE is a high-performance, N-channel TrenchMOS™ ultra-low VF power MOSFET designed to deliver efficient power management and conversion within a compact footprint. This advanced semiconductor device is tailored for a wide range of applications, including but not limited to, DC-DC converters, power supplies, motor controls, and load switches.

Key Features

  • Low On-State Resistance (RDS(on)): The PMZ950UPE boasts an extremely low on-state resistance, which minimizes conduction losses and improves overall efficiency in high-current applications.
  • High Continuous Drain Current (ID): With the capability to handle a high level of continuous drain current, this MOSFET is suitable for applications requiring robust current handling.
  • Ultra-Low Forward Voltage (VF): The device's ultra-low forward voltage ensures reduced power dissipation and enhances power efficiency, making it ideal for power-sensitive designs.
  • High-Speed Switching: Designed for fast switching applications, the PMZ950UPE can switch on and off rapidly, which is critical for reducing switching losses in power conversion systems.
  • Small Footprint: The compact size of the PMZ950UPE allows for a smaller PCB layout, which is crucial for space-constrained applications.

Applications

The versatility of the NXP PMZ950UPE MOSFET makes it an excellent choice for a wide range of electronic designs. Its high efficiency and power density are particularly well-suited for:

  • Power management modules
  • DC-DC converters
  • Battery-powered devices
  • Computing and server power supplies
  • Telecommunications equipment
  • Automotive electronics
  • Industrial control systems

Technical Specifications

The PMZ950UPE features a drain-source voltage (VDS) of 30V, gate-source voltage (VGS) of ±20V, and a maximum continuous drain current (ID) at 25°C of 100A. Its low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with a wide range of drive circuits and controllers.

For engineers and designers looking for a MOSFET that offers both high performance and efficiency, the NXP PMZ950UPE is an excellent choice that meets the stringent requirements of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
975+ $0.0594 $57.9150
2,370+ $0.0487 $115.4190
3,670+ $0.0473 $173.5910
5,055+ $0.0457 $231.0135
6,530+ $0.0443 $289.2790
8,750+ $0.0397 $347.3750
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,805 pieces
MOQ: 975 pcs
Order Increment : 1 pcs
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