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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 20V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 550mV @ 1A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 50μA @ 15V
Capacitance @ Vr, F 25pF @ 5V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-323
Operating Temperature - Junction 125°C (Max)
Win Source Part Number 096812-PMEG2010EA,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMEG2010EA,115 CAD Model

Description

Product Overview: PMEG2010EA,115

The PMEG2010EA,115 is a high-efficiency rectifier diode designed and manufactured by NXP Semiconductors. This surface-mounted device is engineered to offer low forward voltage drop and high surge current capability, making it an ideal choice for a wide range of applications that require efficient power management and conversion.

With its small SOD-128 package, the PMEG2010EA,115 is optimized for space-constrained applications, while still delivering robust performance. The diode features a continuous reverse voltage of 20V and an average forward current of 1A, which ensures that it can handle moderate power requirements with ease.

The PMEG2010EA,115 boasts a low forward voltage, typically around 0.5V, which contributes to its high efficiency. This characteristic minimizes power loss and heat generation when conducting, thereby enhancing the overall performance of the electronic circuit. Additionally, its high surge current capability ensures that the diode can withstand transient overloads without failure, providing reliable protection for sensitive components in the circuit.

This rectifier diode is widely utilized in a variety of applications, including high-efficiency DC-DC converters, power management modules, and polarity protection circuits. Its high reliability and performance make it a preferred choice for designers in the automotive, industrial, and consumer electronics sectors.

The PMEG2010EA,115 is also characterized by its low leakage current, which is particularly important in battery-operated devices where power conservation is critical. With its Planar Maximum Efficiency General Application (MEGA) Schottky barrier technology, it provides a superior alternative to traditional rectifying diodes, offering a significant advantage in applications where efficiency is paramount.

In summary, the PMEG2010EA,115 from NXP Semiconductors is a highly efficient, reliable, and versatile rectifier diode that meets the stringent requirements of modern electronic applications. Its compact footprint, combined with its impressive electrical characteristics, ensures that it continues to be a go-to component for engineers and designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.0958 $50.2950
1,115+ $0.0897 $100.0155
1,735+ $0.0867 $150.4245
2,480+ $0.0807 $200.1360
3,225+ $0.0776 $250.2600
4,025+ $0.0746 $300.2650
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 140,300 pieces
MOQ: 525 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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