The NXP BUK762R7-30B is a high-performance Power MOSFET designed for advanced power management and efficiency. Crafted with precision and reliability in mind, this component is a staple in the electronics industry for applications requiring robust power control. As a product from NXP Semiconductors, a leader in the field, the BUK762R7-30B is engineered to meet stringent quality and performance standards.
Key Features
- Low On-State Resistance (R<sub>DS(on)): The device offers low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
- High-Speed Switching: With its fast switching capabilities, the BUK762R7-30B is ideal for high-frequency applications, ensuring minimal energy waste during transitions.
- High Thermal Performance: The MOSFET is designed to handle high temperatures, ensuring reliable operation even under thermal stress.
- Enhanced Power Density: Its compact size does not compromise on power, allowing for high power density applications.
- Low Threshold Voltage: The low threshold voltage ensures that the device can be driven at lower voltages, making it suitable for low-voltage applications.
Applications
The versatility of the BUK762R7-30B makes it an excellent choice for a wide range of applications. It is commonly used in:
- DC/DC converters
- Motor drives
- Power management systems
- Automotive applications
- Switching regulators
Product Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
30V
Continuous Drain Current (I<sub>D)
75A
Power Dissipation (P<sub>D)
110W
Operating Temperature
-55°C to +175°C
In summary, the NXP BUK762R7-30B Power MOSFET is a high-efficiency, high-performance solution for power control applications. Its robust design and advanced features ensure it can meet the needs of the most demanding power management tasks.