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BU2527DX

Part No BU2527DX
Manufacturer NXP / Nexperia
Catalog HOT - SALES and EOL Components (B - C)
Description Silicon Diffused Power Transistor / Trans Digital BJT NPN 800V 12A 3-Pin(3+Tab) TOP-3D
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 237857-BU2527DX
Popularity Medium
Supply and Demand Status Limited
Family Name BU2527DX
Introduction Date September 01, 1997
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BU2527DX CAD Model

Description

Introducing the NXP BU2527DX High Voltage NPN Power Transistor

The NXP BU2527DX represents a pinnacle of design in high-voltage, high-power transistors. This robust NPN bipolar power transistor is specifically engineered to handle high-speed switching applications while maintaining stability and reliability under harsh operating conditions. Its exceptional performance makes it an ideal choice for a wide range of applications, including switch-mode power supplies, lighting, and horizontal deflection in televisions and monitors.

Outstanding Electrical Characteristics

With a collector-emitter voltage (Vceo) of 800V, the BU2527DX is capable of withstanding significant voltage stress, making it suitable for circuits that experience high voltage spikes. The device also boasts a high collector current (Ic) of up to 12A, ensuring it can manage substantial power without succumbing to performance degradation. The transistor's power dissipation is equally impressive, handling up to 45W, which helps in maintaining thermal stability.

Innovative Design Features

The BU2527DX incorporates state-of-the-art silicon diffused technology, which is a testament to NXP's commitment to innovation and quality. This technology contributes to the device's high-speed switching capabilities and low on-state resistance, resulting in improved overall efficiency. Additionally, the transistor is equipped with an integrated damper diode, which is essential for absorbing energy spikes and protecting the device during flyback operations commonly found in inductive loads.

Robust and Reliable Construction

Encased in an isolated SOT199 package, the BU2527DX is not only robust but also user-friendly. The package's isolation ensures ease of heat sinking and provides excellent protection against electrical shocks, enhancing the safety of your designs. The construction of the BU2527DX is designed to offer high ruggedness and a long operational lifespan, ensuring that your applications remain reliable over time.

Applications and Uses

The versatility of the NXP BU2527DX makes it suitable for a variety of high-performance applications. It is widely used in the power regulation modules of consumer electronics, industrial systems, and telecommunications equipment. Its ability to cope with rapid switching and high voltages also makes it a preferred choice for designers working on innovative power solutions and advanced electronic systems.

Overall, the NXP BU2527DX transistor is a testament to high-quality engineering, providing a reliable and efficient solution for managing high-power and high-voltage conditions in a range of electronic applications.

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