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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer NXP Semiconductors
Packaging Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 215mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 nA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Mounting Surface Mount
Case / Package SOD-123
Supplier Device Package SOD-123
Operating Temperature - Junction 150°C (Max)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Other Part Number 2156-BAS116GWJ-954
Standard Package 1
Win Source Part Number 1325714-BAS116GWJ
Ultra Librarian 3D Model Ultra Librarian BAS116GWJ CAD Model

Description

Product Overview: BAS116GWJ - NXP Semiconductors

The BAS116GWJ is a high-performance switching diode designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is known for its efficiency and reliability in various electronic applications, making it a preferred choice for design engineers worldwide.

Key Features

  • Low Forward Voltage: The BAS116GWJ boasts a low forward voltage drop, which enhances overall energy efficiency in circuits.
  • High Switching Speed: With its fast switching capabilities, this diode is ideal for high-frequency applications.
  • Surface-Mount Package: The device comes in a compact SOD-323 package, suitable for surface-mounted design, saving valuable board space.
  • Lead-Free and RoHS Compliant: NXP ensures that the BAS116GWJ meets current environmental standards by being completely lead-free and RoHS compliant.

Applications

The BAS116GWJ is versatile and can be used in a wide range of applications. Some of the common uses include:

  • High-speed switching in digital circuits
  • Rectification in power supply units
  • Protection circuits for sensitive components
  • Signal demodulation
  • Logic level conversion

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality. The BAS116GWJ has undergone rigorous testing to ensure it meets the stringent standards for industrial and commercial use. Users can trust this diode to perform consistently under various conditions.

Technical Specifications

Parameter Value Repetitive Peak Reverse Voltage 85 V Continuous Forward Current 215 mA Non-repetitive Peak Forward Surge Current 2 A Operating Temperature Range -65°C to +150°C

With its robust design and superior performance, the BAS116GWJ from NXP Semiconductors is an excellent choice for any electronic application requiring a reliable switching diode.

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