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PMN55ENEH

Part No PMN55ENEH
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4.5A 6TSOP / N-Channel 60 V 4.5A (Ta) 560mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series TrenchMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-TSOP
Package / Case SC-74, SOT-457
Base Product Number PMN55
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names PMN55ENE,1727-8452-1,1727-8452-2,1727-8452-6,934660265125
Standard Package 3,000
Win Source Part Number 1002185-PMN55ENEH
Ultra Librarian 3D Model Ultra Librarian PMN55ENEH CAD Model

Description

The PMN55ENEH is an N-channel MOSFET transistor with from an unspecified manufacturer.

  • Drain-Source Voltage: 60V
  • Continuous Drain Current: 4.5A @ 25°C
  • Rds On (Max): 60mOhm @ 3.4A and 10V
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 560mW @ Ta and 6.25W @ Tc
  • Gate Charge (Qg): 19 nC @ 10V
  • Input Capacitance (Ciss): 646 pF @ 30V
  • Packaging: Tape and Reel
  • Standard Package: 3000
  • Application: Automotive
  • Operating Temperature: 150°C

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