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Same model may have multiple batches, images only for reference.
PDTA123JU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTA123JU,115

Part No PDTA123JU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT323
Datasheet
PDTA123JU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10μA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087172-PDTA123JU,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTA123JU,115 CAD Model

Description

The Nexperia PDTA123JU,115 is a PNP pre-biased transistor that comes in an SMD (SMT) package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 100 @ 10μA and 5V
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Supply and Demand Status: sufficient

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