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RN2116MFV,L3F

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Part No	RN2116MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Power - Max	150 mW
Mounting	SMD (SMT)
Package / Case	SOT-723
Supplier Device Package	VESM
Base Product Number	RN2116
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	264-RN2116MFVL3FTR,264-RN2116MFVL3FDKR,RN2116MFV,L3F(B,264-RN2116MFVL3FCT
Standard Package	8,000
Win Source Part Number	1109466-RN2116MFV,L3F
Ultra Librarian 3D Model	Ultra Librarian RN2116MFV,L3F CAD Model

Alternative Products

Description

The RN2116MFV,L3F is a PNP pre-biased transistor that is designed for use in low-power, high-speed switching applications.

Power Dissipation: 150mW
Voltage Rating: 50V
Current Rating: 100mA
Package: 6-pin SOT-723
Operating Temperature: 150°C
DC Current Gain: 50 @ 10mA and 5V
RoHS: Compliant
Application: Power Supplies, Motor Control, and Industrial Automation

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