The BUK9Y15-100E,115 MOSFET from Nexperia USA Inc. is an N-channel transistor with a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 69A @ 25°C.

• Maximum On-Resistance (Rds On): 14.7mOhm @ 20A and 10V gate-source voltage (Vgs)
• Package: LFPAK56, Power-SO8
• Maximum Power Dissipation: 195W (Tc)
• Gate Charge (Qg): 45.8 nC @ 5 Vgs
• Input Capacitance (Ciss): 6139 pF @ 25 Vds
• Maximum Gate-Source Voltage (Vgs): ±10V
• Operating Temperature Range: -55°C to 175°C (TJ)
• Applications: The BUK9Y15-100E,115 MOSFET is suitable for use in various applications, including power management and DC-DC converters.