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Same model may have multiple batches, images only for reference.
BUK4D110-20PX Real Image
Same model may have multiple batches, images only for reference.

BUK4D110-20PX

Part No BUK4D110-20PX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFET FOR AUTOMOTI / P-Channel 20 V 3.4A (Ta), 6.7A (Tc) 2W (Ta), 7.5W (Tc) Surface Mount DFN2020MD-6
Datasheet
BUK4D110-20PX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V
Rds On (Max) @ Id, Vgs 96mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 365 pF @ 10 V
Power Dissipation (Max) 2W (Ta), 7.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1727-BUK4D110-20PXDKR,1727-BUK4D110-20PXCT,934661724115,1727-BUK4D110-20PXTR
Standard Package 3,000
Win Source Part Number 1150484-BUK4D110-20PX
Ultra Librarian 3D Model Ultra Librarian BUK4D110-20PX CAD Model

Description

This P-channel MOSFET from Nexperia USA Inc. is designed for use in automotive applications and is part of the TrenchMOS™ series.

  • Drain to Source Voltage: 20 V
  • Continuous Drain Current: 3.4A (Ta), 6.7A (Tc)
  • Maximum On-Resistance: 96mOhm @ 3.4A and 8V
  • Gate Charge: 5 nC @ 4.5 V
  • Input Capacitance: 365 pF @ 10 Vds
  • Maximum Gate-Source Voltage: ±12V
  • Operating Temperature: -55°C to 175°C
  • Package: 6-UDFN Exposed Pad
  • Packaging: Tape and reel

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