The NEC D43256AC-10L is a 262,144-bit (256K x 1) Dynamic Random Access Memory (DRAM). It functions as a temporary storage medium in various electronic devices, requiring constant power and periodic refresh cycles to retain data. This particular model is known for its relatively fast access time and low power consumption.

Applications

• Personal Computers: Utilized in older personal computers as main system memory.
• Graphics Cards: Implemented in graphics cards for frame buffer storage.
• Printers: Incorporated into printer memory for temporary data buffering.
• Industrial Control Systems: Integrated into industrial automation equipment requiring memory storage.
• Embedded Systems: Used in various embedded system applications needing low power memory solutions.

Features

• Capacity: 262,144 bits (256K x 1 organization).
• Access Time: 100ns (nanoseconds).
• Refresh Cycle: Requires periodic refresh cycles to maintain data.
• Power Consumption: Low power consumption (indicated by the 'L' suffix).
• Package: DIP (Dual In-line Package).
• Single 5V Supply: Operates on a single 5V power supply.

Benefits

• Fast Access Time: 100ns access time enables quick data retrieval and storage.
• Low Power Consumption: The 'L' suffix indicates a low-power version, making it energy-efficient.
• Cost-Effective: Provides a cost-effective memory solution for various applications.
• Easy Integration: The DIP package allows for straightforward integration into existing circuits.
• Reliable: Delivers reliable memory performance with proper refresh implementation.

Additional Details

The D43256AC-10L is a volatile memory component and requires constant power to retain its stored data. The 'AC' in the part number likely indicates a specific revision or manufacturing process used by NEC. The '-10' denotes the access time of 100 nanoseconds. The 256K x 1 organization means the memory is arranged as 262,144 individual memory locations, each capable of storing one bit of data. The 'L' suffix signifies a low-power version, making it suitable for applications where power efficiency is a primary concern. The refresh cycle is crucial for maintaining data integrity and must be implemented correctly in the memory controller. This DRAM is sensitive to electrostatic discharge (ESD) and should be handled with proper ESD precautions.