The P2N5138 is a silicon planar epitaxial PNP transistor manufactured by National Semiconductor (now Texas Instruments). It is designed for use in high-speed switching and amplifier applications.

Applications

• High-Speed Switching: Used in high-speed switching circuits for fast signal processing.
• Amplifier Circuits: Employed in amplifier stages for signal amplification.
• Driver Circuits: Utilized as driver transistors for driving relays, lamps, and other loads.
• Oscillator Circuits: Found in oscillator circuits for generating electronic signals.
• General Purpose Switching: Used in general-purpose switching applications.

Features

• PNP Transistor: A PNP bipolar junction transistor (BJT).
• High-Speed Switching: Designed for fast switching speeds.
• Low Saturation Voltage: Offers low saturation voltage for efficient switching.
• High Current Gain: Provides high current gain for signal amplification.
• Small Signal Amplifier: Suitable for small signal amplifier applications.

Benefits

• Fast Switching: Enables high-speed signal processing.
• Efficient Performance: Offers efficient performance with low saturation voltage.
• Versatile Applications: Suitable for a wide range of switching and amplifier applications.
• Reliable Operation: Provides reliable performance in various electronic circuits.

Technical Specifications

The P2N5138 has a collector-emitter voltage (VCEO) of -80V, a collector current (IC) of -500mA, and a power dissipation of 625mW. It is typically packaged in a TO-92 package. It is designed to operate within a temperature range of -65°C to +150°C.