The 2N3700 is a silicon NPN transistor manufactured by Microsemi Corporation. It is designed for high-speed switching and amplifier applications. Known for its reliability and performance, this transistor is suitable for demanding electronic circuits.

Applications

• High-speed switching circuits
• Small signal amplifiers
• Oscillator circuits
• Driver stages
• Analog signal processing

Features

• High switching speed
• Low saturation voltage
• High current gain
• High breakdown voltage
• RoHS compliant

Benefits

• Efficient switching performance in high-frequency applications
• Reduced power dissipation
• Enhanced signal amplification
• Increased circuit reliability
• Environmentally friendly due to RoHS compliance

Additional Details

The 2N3700 features a collector-emitter breakdown voltage (VCEO) of 80V and a collector current (IC) of 500mA. The typical current gain (hFE) ranges from 40 to 120. This transistor is commonly available in a TO-5 or TO-18 package. For specific details on operating temperature, power dissipation, and other characteristics, refer to the Microsemi datasheet for the 2N3700. The datasheet provides comprehensive information necessary for proper circuit design and application.