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N25Q512A13GSFA0F

Part No N25Q512A13GSFA0F
Manufacturer Micron Technology Inc.
Catalog Memory
Description Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
Sample
Rohs State rohs
ECAD Module
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Manufacturer Micron Technology Inc.
Win Source Part Number 1229184-N25Q512A13GSFA0F
Manufacturer Homepage www.micron.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian N25Q512A13GSFA0F CAD Model

Description

The N25Q512A13GSFA0F is a 512 Mbit (64MB) serial NOR flash memory device manufactured by Micron Technology. It is designed for high-performance, low-power applications requiring fast read and write speeds, as well as reliable data storage. This memory device utilizes a Serial Peripheral Interface (SPI) for communication, making it easy to integrate into a wide range of systems.

Applications:

  • Embedded systems
  • Mobile devices
  • Networking equipment
  • Industrial control systems
  • Automotive electronics
  • FPGA configuration storage
  • Boot memory

Features:

  • 512 Mbit (64MB) storage capacity
  • SPI interface (Serial Peripheral Interface)
  • Standard, Dual, and Quad SPI modes
  • Fast read speeds up to 104 MHz (Quad SPI)
  • Low power consumption
  • Wide voltage range (2.7V to 3.6V)
  • Page program (256 bytes per page)
  • Sector erase (4KB) and Block erase (32KB, 64KB)
  • Write protect features
  • Enduring data retention
  • Small package options

Benefits:

  • High storage capacity in a small form factor
  • Fast data access for quick system boot-up and execution
  • Low power consumption for extended battery life in portable devices
  • Flexible SPI interface for easy integration
  • Reliable data storage in harsh environments
  • Cost-effective solution for embedded memory needs

Additional Details:

The N25Q512A13GSFA0F supports standard SPI, Dual SPI, and Quad SPI modes, providing flexibility in terms of data transfer rates. The Quad SPI mode allows for transferring data four bits at a time, significantly increasing read and write speeds. The device features a page program mode that allows writing up to 256 bytes of data in a single operation, improving write performance. Sector and block erase operations provide efficient ways to erase large portions of the memory array. Write protect features prevent accidental data corruption. The device operates over a wide voltage range of 2.7V to 3.6V. The N25Q512A13GSFA0F is available in various package options, including SOIC, WSON, and BGA. This makes it suitable for a variety of applications with different space constraints. Data retention is typically specified as 20 years.

The operating temperature range is generally industrial temperature grade (-40°C to +85°C). Always refer to the Micron datasheet for the definitive specifications and timings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $390.0000 $390.0000
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