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MT47H64M16NF-25E:H

Part No MT47H64M16NF-25E:H
Manufacturer Micron Technology Inc.
Catalog DDR
Description DDR2-800 64Mx16 (1Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Series *
Win Source Part Number 942416-MT47H64M16NF-25E:H
Ultra Librarian 3D Model Ultra Librarian MT47H64M16NF-25E:H CAD Model

Description

The MT47H64M16NF-25E:H is a DDR2 SDRAM component manufactured by Micron Technology Inc. This memory chip is designed for applications requiring substantial bandwidth and efficient data transfer capabilities. It serves as a key component in electronic devices and systems needing fast, reliable memory access.

Applications:

  • Desktop and Laptop Computers: Used as the primary system memory for running operating systems and various applications.
  • Graphics Cards: Provides rapid memory access for processing textures and frame buffers, enhancing overall graphical performance.
  • Gaming Consoles: Delivers the required memory bandwidth for demanding game environments, ensuring smooth and responsive gameplay.
  • Networking Equipment: Utilized in routers, switches, and network devices for buffering and packet processing, improving network efficiency.
  • Embedded Systems: Well-suited for high-performance embedded applications where fast, reliable memory access is essential.

Features:

  • Capacity: 64Mb x 16 configuration, providing a total capacity of 1024 Mbits (1 Gbit).
  • Data Rate: DDR2 architecture allows for data transfer on both the rising and falling edges of the clock signal, effectively doubling the data rate compared to standard SDR SDRAM. The -25E speed grade indicates a specific data transfer rate (consult the datasheet for precise details, typically around 400 MHz).
  • Voltage: Operates at a standard DDR2 voltage of 1.8V, which contributes to lower power consumption and reduced heat generation.
  • Interface: Employs a standard DDR2 interface, ensuring broad compatibility with a wide range of memory controllers and system architectures.
  • Package: Commonly available in a FBGA (Fine-Pitch Ball Grid Array) package, offering excellent thermal and electrical performance for stable operation.
  • Clock Frequency: The clock frequency is determined by the speed grade designation (-25E). Consult the datasheet for the exact value.
  • Timings: Specific CAS latency (CL), RAS to CAS delay (tRCD), and RAS precharge time (tRP) timings are defined in the datasheet to optimize performance and ensure proper system operation.

Benefits:

  • Enhanced Bandwidth: DDR2 technology offers significantly higher bandwidth compared to DDR, resulting in faster data transfer rates and improved overall system responsiveness.
  • Reduced Power Consumption: Operates at 1.8V, minimizing power consumption and heat generation, which is crucial for mobile and power-sensitive applications.
  • Improved System Performance: Faster memory access times translate to quicker application loading, smoother multitasking, and enhanced overall system performance and user experience.
  • Reliable Performance: Micron is a reputable manufacturer known for producing high-quality and reliable memory components.
  • Broad Compatibility: DDR2 interface provides compatibility with a wide array of memory controllers and system platforms, simplifying integration and deployment.

Additional Details:

The MT47H64M16NF-25E:H is frequently used in applications that demand rapid memory access and high bandwidth capabilities. Its DDR2 architecture facilitates efficient data transfer, making it suitable for demanding tasks such as gaming, video editing, and scientific simulations. The FBGA package provides excellent thermal and electrical characteristics, ensuring stable and reliable operation, even under heavy workloads. For comprehensive specifications, including precise timing parameters, voltage requirements, and thermal characteristics, consult the official Micron datasheet. The specific data rate associated with the -25E speed grade is critical for ensuring system compatibility and achieving optimal performance.

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