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MT40A2G8JE-062E AAT:E

Part No MT40A2G8JE-062E AAT:E
Manufacturer Micron Technology Inc.
Catalog DRAM
Description DDR4-3200 2Gx8 (16Gb)
Sample
Rohs State rohs
ECAD Module
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Category DRAM
Manufacturer Micron Technology Inc.
Win Source Part Number 1446434-MT40A2G8JE-062E AAT:E
Package Box
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 2G x 8
Memory Interface POD
Clock Frequency 1.6GHz
Write Cycle Time - Word, Page 15ns
Access Time 19 ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature -40°C ~ 105°C (TC)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-FBGA (9x11)
Ultra Librarian 3D Model Ultra Librarian MT40A2G8JE-062E AAT:E CAD Model

Description

The MT40A2G8JE-062E AAT:E, a product of Micron's dedication to memory technology innovation, is a high-grade DDR4 DRAM module designed for exceptional performance. With its DDR4-3200 speed, it is engineered to facilitate fast and efficient data processing, making it an excellent choice for a wide range of applications, from sophisticated computing platforms to high-capacity servers and leading-edge networking systems. This module's 2Gx8 configuration translates into a total capacity of 16 gigabits (Gb), addressing the demands for high-density memory in advanced technology ecosystems. Micron's commitment to innovation is evident in the module's design, which optimizes power efficiency, thereby contributing to the reduction of the energy footprint of computing systems without compromising performance. The MT40A2G8JE-062E AAT:E reflects the company's focus on reliability and durability, ensuring that it can support continuous operation under demanding conditions, a critical factor for mission-critical systems. Its compatibility with a comprehensive range of hardware and its ability to perform in various operational environments make it a versatile and dependable memory solution. For decision-makers and IT professionals targeting to push the boundaries of what their computing infrastructures can achieve, this memory module presents a robust option that combines speed, capacity, and energy efficiency.

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