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VN2106N3-G

Part No VN2106N3-G
Manufacturer Microchip Technology
Catalog FETs - Single
Description N-Channel Enhancement-Mode Vertical DMOS FETs | MOSFET N-CH 60V 300MA TO92-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 300mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 4Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.4V at 1mA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-92-3
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA)
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1279469-VN2106N3-G
Manufacturer Homepage www.supertex.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VN2106N3-G CAD Model

Description

Microchip Technology's VN2106N3-G MOSFET

The VN2106N3-G is a high-performance N-channel enhancement-mode Field-Effect Transistor (FET) designed by Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions. This MOSFET is part of the Vishay Siliconix series and is well-suited for a variety of applications that require efficient power management and high reliability.

With its compact TO-92 package, the VN2106N3-G offers a convenient solution for space-constrained applications. Its design is optimized for low threshold voltage (Vgs(th)), making it easy to drive and suitable for low voltage applications. This characteristic ensures that the VN2106N3-G can be controlled with lower gate voltages, thereby reducing power consumption and improving overall system efficiency.

Key specifications of the VN2106N3-G include a drain-source voltage (Vds) of 60V, which allows it to handle moderate power levels, and a continuous drain current (Id) of 280mA, providing ample current for a wide range of applications. The device also boasts a low on-resistance (Rds(on)) of 5 Ohms at a Vgs of 10V, which minimizes losses and improves performance in high-current circuits.

The VN2106N3-G MOSFET is designed for logic level applications, including but not limited to, power management in consumer electronics, battery management systems, and low-power motor control circuits. Its high input impedance and fast switching speeds make it an excellent choice for high-speed switching applications.

Microchip Technology's commitment to quality ensures that the VN2106N3-G meets stringent reliability and performance standards. This MOSFET is RoHS compliant, reflecting Microchip's dedication to environmental responsibility and the reduction of hazardous substances in electronic components.

Whether you're developing power supplies, designing motor control circuits, or creating innovative consumer electronics, the VN2106N3-G from Microchip Technology offers the performance, reliability, and efficiency needed to power your innovations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7549 $52.8430
165+ $0.6195 $102.2175
250+ $0.6001 $150.0250
345+ $0.5807 $200.3415
450+ $0.5614 $252.6300
600+ $0.5033 $301.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 311 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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