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Same model may have multiple batches, images only for reference.
2SB772-O-BP Real Image
Same model may have multiple batches, images only for reference.

2SB772-O-BP

Part No 2SB772-O-BP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 3A TO126 / Bipolar (BJT) Transistor PNP 30 V 3 A 50MHz 1.25 W Through Hole TO-126
Datasheet
2SB772-O-BP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V
Power - Max 1.25 W
Frequency - Transition 50MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 1,000
Win Source Part Number 1036824-2SB772-O-BP
Ultra Librarian 3D Model Ultra Librarian 2SB772-O-BP CAD Model

Description

The Micro Commercial Co 2SB772-O-BP is a PNP bipolar junction transistor (BJT) with a maximum power of 1.25W and a maximum voltage of 30V collector emitter breakdown.

  • Maximum Power: 1.25W
  • Maximum Voltage (Collector Emitter Breakdown): 30V
  • Maximum Current (Collector): 3A
  • DC Current Gain: 100 @ 1A and 2V
  • Vce Saturation: 500mV @ 200mA and 2A
  • Cutoff Current (Collector): 1µA
  • Frequency Transition: 50MHz
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-225AA, TO-126-3
  • Category: Transistors - Bipolar (BJT) - Single
  • Status: Obsolete in the open market.

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