The LY61L25616MN-20 is a high-performance, low-power CMOS Static RAM (SRAM) device manufactured by Lyontek Inc. It is organized as 256K words by 16 bits and operates from a single 3.3V power supply. This SRAM is designed for applications requiring moderate access times and low power consumption, making it suitable for various embedded systems and memory caching applications.

Applications

• Cache memory for microprocessors
• Buffer memory in data acquisition systems
• High-speed storage in embedded systems
• Networking equipment
• Digital signal processing (DSP) applications

Features

• Access time: 20ns
• Low power consumption: Active and Standby modes
• Single 3.3V power supply operation
• Fully static operation: No clock or refresh required
• Tri-state outputs
• Data retention voltage: 2V (min)
• Available in various package options (e.g., TSOP)
• CMOS technology for low power and high reliability

Benefits

• Good speed performance enables faster processing and data retrieval.
• Low power consumption extends battery life in portable devices.
• Simple memory interface simplifies system design.
• Static operation eliminates the need for complex refresh circuitry, reducing system cost and complexity.
• Wide operating voltage range provides flexibility in system design.
• Suitable for high-density memory applications due to its compact size and high storage capacity.

Technical Specifications

The LY61L25616MN-20 SRAM has an access time of 20ns. It operates with a supply voltage of 3.3V and features low active and standby current. The device provides TTL-compatible inputs and outputs. It supports a wide temperature range, typically from -40°C to +85°C, making it suitable for industrial applications. Packaging options include TSOP44.