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Same model may have multiple batches, images only for reference.
IXTX120N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTX120N65X2

Part No IXTX120N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 120A PLUS247-3 / N-Channel 650 V 120A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX120N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1013995-IXTX120N65X2
Ultra Librarian 3D Model Ultra Librarian IXTX120N65X2 CAD Model

Description

The IXYS Ultra X2 MOSFET is a high-quality electronic component that is perfect for use in a variety of applications.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 120A @ 25°C
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Power Dissipation (Max): 1250W (Tc)

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5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
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