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Same model may have multiple batches, images only for reference.
IXTP4N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTP4N65X2

Part No IXTP4N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4A TO220 / N-Channel 650 V 4A (Tc) 80W (Tc) Through Hole TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 25 V
Power Dissipation (Max) 80W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number IXTP4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066204-IXTP4N65X2
Ultra Librarian 3D Model Ultra Librarian IXTP4N65X2 CAD Model

Description

The IXYS IXTP4N65X2 is an N-channel MOSFET transistor that features a drain to source voltage of 650 V and a continuous drain current of 4A (Tc).

  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 4A (Tc)
  • Rds On (Max): 850mOhm @ 2A, 10V
  • Gate Charge (Qg): 8.3 nC @ 10 V
  • Input Capacitance (Ciss): 455 pF @ 25 V
  • Win Source Part Number: 1066204-IXTP4N65X2

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